| 摘要 |
<p>A semiconductor device includes a thin-film diode ( 1 ) and a protection circuit with a protection diode ( 20 ). The thin-film diode ( 1 ) includes: a semiconductor layer with first, second and channel regions; a gate electrode; a first electrode ( S1 ) connected to the first region and the gate electrode; and a second electrode ( D1 ) connected to the second region. The conductivity type of the thin-film diode ( 1 ) may be N-type and the anode electrode of the protection diode ( 20 ) may be connected to a line ( 3 ) that is connected to either the gate electrode or the first electrode of the thin-film diode ( 1 ). Or the conductivity type of the thin-film diode may be P-type and the cathode electrode of the protection diode may be connected to the line that is connected to either the gate electrode or the first electrode of the thin-film diode. The protection circuit includes no other diodes that are connected to the line ( 3 ) so as to have a current flowing direction opposite to the protection diode's ( 20 ). As a result, deterioration of a thin-film diode due to ESD can be reduced with an increase in circuit size minimized.</p> |
