发明名称 |
Three dimensional integrated deep trench decoupling capacitors |
摘要 |
A method of forming an integrated circuit device includes forming a plurality of deep trench decoupling capacitors on a first substrate; forming a plurality of active circuit devices on a second substrate; bonding the second substrate to the first substrate; and forming electrical connections between the deep trench capacitors and the second substrate.
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申请公布号 |
US8455979(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201213369460 |
申请日期 |
2012.02.09 |
申请人 |
BOOTH, JR. ROGER A.;CHENG KANGGUO;TODI RAVI M.;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;CHENG KANGGUO;TODI RAVI M.;WANG GENG |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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