发明名称 |
Cell library, integrated circuit, and methods of making same |
摘要 |
A cell library intended to be used to form an integrated circuit, this library defining a first cell including a first MOS transistor of minimum dimensions, and a second cell including a second MOS transistor of lower leakage current, wherein the second cell takes up the same surface area as the first cell, and the second MOS transistor has a gate of same length as the gate of the first MOS transistor across at least a first width in its central portion, and of greater length across at least a second width on either side of the central portion.
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申请公布号 |
US8458638(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113023172 |
申请日期 |
2011.02.08 |
申请人 |
MENUT OLIVIER;BERGHER LAURENT;YESILADA EMEK;TROUILLER YORICK;FOUSSADIER FRANCK;BINGERT RAPHAEL;STMICROELECTRONICS SA;STMICROELECTRONICS (CROLLES 2) SAS;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
MENUT OLIVIER;BERGHER LAURENT;YESILADA EMEK;TROUILLER YORICK;FOUSSADIER FRANCK;BINGERT RAPHAEL |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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