| 摘要 |
PURPOSE: A light emitting device package is provided to improve reliability by growing a GaN based semiconductor layer on the non-polar or the anti-polar surface of a substrate. CONSTITUTION: A package body(110) includes a cavity. A first, a second, and a third light emitting device(130,140,150) are arranged in the bottom surface of the cavity. The first, the second, and the third light emitting device have different peak wavelengths. A first light emitting device is grown to have the non-polar or the anti-polar surface. The peak wavelength of the first light emitting device is 500-560 nm.
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