发明名称 |
FABRICATION METHOD OF CIGS THIN FILMS |
摘要 |
<p>PURPOSE: A method for manufacturing a CIGS based thin film is provided to improve the efficiency of a CIS based thin film solar cell by reducing cavity voids between a back electrode and a CIS based thin film. CONSTITUTION: A back electrode is deposited on a substrate(S100). Indium is deposited on the back electrode(S200). Indium selenium is formed by a first selenization process(S300). Copper is deposited on the indium selenium(S400). A CIS based absorbing layer is formed by a second selenization process(S500). [Reference numerals] (AA) Start; (BB) End; (S100) Step of depositing a back electrode on a substrate; (S200) Step of depositing In metal on the back electrode; (S300) Step of forming In_X_Se_Y by a first selenization process; (S400) Step of depositing Cu metal on In_X_Se_Y; (S500) Step of forming a CIS based absorbing layer by a second selenization process</p> |
申请公布号 |
KR20130058271(A) |
申请公布日期 |
2013.06.04 |
申请号 |
KR20110124190 |
申请日期 |
2011.11.25 |
申请人 |
KOREA PHOTONICS TECHNOLOGY INSTITUTE |
发明人 |
KO, HANG JU;KIM, HYO JIN;HAN, MYOUNG SOO;SHIN, JAE CHEOL |
分类号 |
H01L31/0749;H01L31/0445;H01L31/18 |
主分类号 |
H01L31/0749 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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