| 摘要 |
PURPOSE: An ultraviolet semiconductor light emitting device is provided to improve external quantum efficiency by using a second conductive semiconductor layer as a reflection layer formed between an active layer and a fourth conductive semiconductor layer. CONSTITUTION: An active layer(19) for producing an ultraviolet ray is arranged on a first conductive semiconductor layer(15). A second conductive semiconductor layer(21) functioning as a reflection layer is arranged on the active layer. A third conductive semiconductor layer(23) is arranged on the second conductive semiconductor layer. A fourth conductive semiconductor layer(25) is arranged on the third conductive semiconductor layer. The first conductive semiconductor layer and the third conductive semiconductor layer function as electrode layers.
|
