发明名称 |
Method to control metal semiconductor micro-structure |
摘要 |
A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.
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申请公布号 |
US8456011(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113006664 |
申请日期 |
2011.01.14 |
申请人 |
LAVOIE CHRISTIAN;OZCAN AHMET S.;ZHANG ZHEN;YANG BIN;INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
LAVOIE CHRISTIAN;OZCAN AHMET S.;ZHANG ZHEN;YANG BIN |
分类号 |
H01L23/532 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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