发明名称 |
Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices |
摘要 |
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.
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申请公布号 |
US8455269(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US20090376199 |
申请日期 |
2009.02.03 |
申请人 |
MIYANAGI TOSHIYUKI;TSUCHIDA HIDEKAZU;KAMATA ISAHO;SUGAWARA YOSHITAKA;NAKAYAMA KOJI;ISHII RYOSUKE;CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY |
发明人 |
MIYANAGI TOSHIYUKI;TSUCHIDA HIDEKAZU;KAMATA ISAHO;SUGAWARA YOSHITAKA;NAKAYAMA KOJI;ISHII RYOSUKE |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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