发明名称 |
Method for making epitaxial structure |
摘要 |
A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. A plurality of epitaxial crystal grains spaced from each other is epitaxially grown on the epitaxial growth surface. Also, the carbon nanotube layer can be further removed.
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申请公布号 |
US8455336(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113276285 |
申请日期 |
2011.10.18 |
申请人 |
WEI YANG;FAN SHOU-SHAN;TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
WEI YANG;FAN SHOU-SHAN |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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