发明名称 Method for making epitaxial structure
摘要 A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. A plurality of epitaxial crystal grains spaced from each other is epitaxially grown on the epitaxial growth surface. Also, the carbon nanotube layer can be further removed.
申请公布号 US8455336(B2) 申请公布日期 2013.06.04
申请号 US201113276285 申请日期 2011.10.18
申请人 WEI YANG;FAN SHOU-SHAN;TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 WEI YANG;FAN SHOU-SHAN
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
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