LIGHT EMITTING DIODE HAVING DOPED ZNO LAYER AND METHOD OF MANUFACTURING THEREOF

摘要

PURPOSE: A light emitting diode having doped ZnO layer and a method for manufacturing the same are provided to control the dopant concentration of a doped ZnO layer and a kind of a dopant to generate light of various wavelengths, and secure a high CRI(Color Rendering Index). CONSTITUTION: A light emitting structure(15) is formed on a sapphire substrate(11). The light emitting structure includes an n-type semiconductor(15a), a p-type semiconductor(15c), and an active layer(15b). A ZnO layer(12) is formed on the upper or lower layer of the light emitting structure. The ZnO layer includes a ZnO nanorod or a ZnO thin film layer which have different dopants. A transparent electrode(18a) is formed on the upper part of a p-type semiconductor layer.