发明名称 Semiconductor device with buried gate and method for fabricating the same
摘要 A semiconductor device includes a first region and a second region, a buried gate arranged in the first region, and an oxidation prevention barrier surrounding the first region.
申请公布号 US8455343(B2) 申请公布日期 2013.06.04
申请号 US20100832748 申请日期 2010.07.08
申请人 JANG SE-AUG;HYNIX SEMICONDUCTOR INC. 发明人 JANG SE-AUG
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
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