发明名称 |
Semiconductor light-emitting device with improved light extraction efficiency |
摘要 |
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
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申请公布号 |
US8455906(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113286881 |
申请日期 |
2011.11.01 |
申请人 |
KIM SUN WOON;KIM HYUN KYUNG;KIM JE WON;CHOI IN SEOK;LEE KYU HAN;OH JEONG TAK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUN WOON;KIM HYUN KYUNG;KIM JE WON;CHOI IN SEOK;LEE KYU HAN;OH JEONG TAK |
分类号 |
H01L31/0232;H01L33/10;H01L31/0236;H01L33/32;H01L33/34 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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