发明名称 |
Light emitting device using GaN LED chip |
摘要 |
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.
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申请公布号 |
US8455886(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201213418827 |
申请日期 |
2012.03.13 |
申请人 |
JOICHI TAKAHIDE;OKAGAWA HIROAKI;HIRAOKA SHIN;SHIMA TOSHIHIKO;TANIGUCHI HIROKAZU;MITSUBISHI CHEMICAL CORPORATION |
发明人 |
JOICHI TAKAHIDE;OKAGAWA HIROAKI;HIRAOKA SHIN;SHIMA TOSHIHIKO;TANIGUCHI HIROKAZU |
分类号 |
H01L27/15;H01L33/32;H01L33/38;H01L33/40 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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