发明名称 |
Ge quantum dots for dislocation engineering of III-N on silicon |
摘要 |
A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.
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申请公布号 |
US8455881(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113235544 |
申请日期 |
2011.09.19 |
申请人 |
ARKUN ERDEM;CLARK ANDREW;TRANSLUCENT, INC. |
发明人 |
ARKUN ERDEM;CLARK ANDREW |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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