发明名称 |
Integrated circuit system employing gate shield and/or ground shield |
摘要 |
A method for manufacturing an integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.
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申请公布号 |
US8455350(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US20060465793 |
申请日期 |
2006.08.18 |
申请人 |
SEAH TEO LENG XAVIER;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
SEAH TEO LENG XAVIER |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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