发明名称 Integrated circuitry, switches, and methods of selecting memory cells of a memory device
摘要 Some embodiments include switches that have a graphene structure connected to a pair of spaced-apart electrodes. The switches may further include first and second electrically conductive structures on opposing sides of the graphene structure from one another. The first structure may extend from one of the electrodes, and the second structure may extend from the other of the electrodes. Some embodiments include the above-described switches utilized as select devices in memory devices. Some embodiments include methods of selecting memory cells.
申请公布号 US8456947(B2) 申请公布日期 2013.06.04
申请号 US201113050630 申请日期 2011.03.17
申请人 SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.
分类号 G11C5/12;H01H36/00 主分类号 G11C5/12
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