发明名称 Yield enhancement by multiplicate-layer-handling optical correction
摘要 Potential lithographic hot spots associated with a lithographic level are marked by a marker layer identifying a marked region. Multiplicate layers are generated for each design shape in that lithographic level in each marked region. Each multiplicate layer includes a different type of variant for each design shape in the lithographic level. The different types of variants correspond to different design environments. Lithographic simulation is performed with each type of variants under the constraint of long range effects, such as pattern density, provided by adjacent shapes in the lithographic level. In each marked region, the results of lithographic simulations are evaluated to determine an optimal type among the variants. The optimal type is retained for the lithographic level in each marked region, thereby providing a chip design layout in which various marked regions can include different types of variant shapes to provide local lithographic optimization.
申请公布号 US8458625(B2) 申请公布日期 2013.06.04
申请号 US201113193716 申请日期 2011.07.29
申请人 BASHABOINA PAVAN Y.;CULP JAMES A.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BASHABOINA PAVAN Y.;CULP JAMES A.
分类号 G06F17/50 主分类号 G06F17/50
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