发明名称 |
Phase change memory device capable of increasing sensing margin and method for manufacturing the same |
摘要 |
A phase change memory device capable of increasing a sensing margin and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate formed with a device isolation structure which defines active regions; first conductivity type impurity regions formed in surfaces of the active regions and having the shape of a line; a second conductivity type well formed in the semiconductor substrate at a position lower than the device isolation structure; a second conductivity type ion-implantation layer formed in the semiconductor substrate at a boundary between a lower end of the device isolation structure and the semiconductor substrate; a plurality of vertical PN diodes formed on the first conductivity type impurity regions; and phase change memory cells formed on the vertical PN diodes.
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申请公布号 |
US8455329(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113047154 |
申请日期 |
2011.03.14 |
申请人 |
CHANG HEON YONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
CHANG HEON YONG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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