FLASH MEMORY DEVICE AND READING METHOD OF FLASH MEMORY DEVICE

摘要

PURPOSE: A flash memory system and a reading method thereof are provided to improve the reliability of reading by rapidly and accurately correcting read errors. CONSTITUTION: First data read in a reading level in a first index of a reading retry table is transmitted to a second latch through a first latch among latches(S120). ECC(Error Check and Correction) decoding is performed for the first data transmitted to the second latch while second data read in a reading level included in a second index among the indexes of the reading retry table is transmitted to the first latch(S140). The second data of the first latch is transmitted to the second latch and the ECC decoding is performed for the second data transmitted to the second latch(S160). Soft decision is performed in one reading level among the reading levels which read the first data and the second data(S180). [Reference numerals] (S120) Transmit first data read in a reading level included in a first index among indexes of a reading retry table to a second latch through a first latch among latches; (S140) Perform ECC decoding for the first data transmitted to the second latch while second data read in a reading level included in a second index among the indexes of the reading retry table to the first latch; (S160) Transmit the second data of the first latch to the second latch and perform ECC decoding for the second data transmitted to the second latch; (S180) Perform soft decision at one reading level among the reading levels which read the first data and the second data by comparing an ECC decoding result of the first data and a decoding result of the second data