| 摘要 |
<p>TITANIUM TARGET FOR SPUTTERINGProvided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target forsputtering, the purity of titanium is 99.995 mass% or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film. [Selected Drawing] Figure 2</p> |
