METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT METHOD, AND SUBSTRATE TREATMENT DEVICE

摘要

Provided: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.