| 摘要 |
PURPOSE: A sputtering device is provided to uniformly form a thin film with high purity by using an ion beam source for a sputtering operation without forming plasma in a reaction chamber. CONSTITUTION: A target(23) is installed in a processing chamber(21). An ion beam source(10) irradiates ion beams to the target. A substrate faces the target. A vacuum exhaust tube(22) is connected to a vacuum pump and exhausts the processing chamber. A sputtering electrode(24) is connected to a power source to form a negative polarity. A substrate stage(25) loads the substrate.
|
