发明名称 METHOD OF CONTROLLING SUBSTRATE TEMPERATURE AND SUBSTRATE PROCESSING APPARATUS USING THEREOF
摘要 PURPOSE: A method for controlling a temperature of a substrate and a substrate processing apparatus are provided to adaptively control the temperature of the substrate by individually controlling a gas stream which is independently supplied to the plurality of substrates according to the substrates. CONSTITUTION: A reaction chamber(100) includes a chamber body and a top lead to open or close the top opening of the chamber body. A substrate support unit(200) includes a satellite(210) to mount a plurality of substrates(220). A temperature measuring unit(300) measures the temperatures of the plurality of substrates received in the satellite. A gas supply unit independently supplies a gas to each substrate. A control unit(500) controls the flow of the gas to form a gas stream. [Reference numerals] (500) Control unit
申请公布号 KR20130057231(A) 申请公布日期 2013.05.31
申请号 KR20110123046 申请日期 2011.11.23
申请人 WONIK IPS CO., LTD. 发明人 KIM, WON JIN
分类号 H01L21/205;H01L21/02 主分类号 H01L21/205
代理机构 代理人
主权项
地址