METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL, AND WAFER

摘要

To provide a method of manufacturing silicon single crystal by manufacturing with a Czochralski method, p-type silicon single crystal from which a wafer having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained. P-type silicon single crystal 2 is grown with a Czochralski method from an initial silicon melt in which boron concentration is not higher than 4E14 atoms/cm3 and a ratio of phosphorus concentration to boron concentration is not lower than 0.42 and not higher than 0.50.