发明名称 |
SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS |
摘要 |
<p>Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.</p> |
申请公布号 |
SG188976(A1) |
申请公布日期 |
2013.05.31 |
申请号 |
SG20130018452 |
申请日期 |
2011.09.13 |
申请人 |
MICRON TECHNOLOGY INC. |
发明人 |
KRAMER, STEPHEN, J.;SANDHU, GURTEJ, S. |
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