SOLID-STATE IMAGE PICKUP DEVICE

摘要

This solid-state image pickup device is provided with: a plurality of pixels (11), which are disposed in matrix; a semiconductor substrate (101); first electrodes (113), which are formed above the semiconductor substrate (101) by each pixel (11); a photoelectric conversion film (114), which is formed on the first electrodes (113), and photoelectrically converts light into signal charges; charge accumulating regions (104), which are formed on the semiconductor substrate (101), and accumulate the signal charges generated due to the photoelectric conversion performed by means of the photoelectric conversion film (114); a contact plug (107), which electrically connects a first electrode (113) of a corresponding pixel (11) and a charge accumulating region (104) to each other; an N-type impurity region (117), which is formed in a charge accumulating region (104) surface region in contact with the contact plug (107); a P-type impurity region (151) formed in a region not in contact with the contact plug (107); and a low-concentration N-type impurity region (150) formed between the N-type impurity region (117) and the P-type impurity region (151).