| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a mechanical strength of a semiconductor device having an air gap without increasing the number of processes. <P>SOLUTION: In a semiconductor device manufacturing method, an annular via 1R is formed by connecting a conductive material required for a semiconductor device, such as an outline via of a via array; a region of an insulation film 2 is surrounded by the annular via 1R; in formation of an air gap, the region surrounded by the conductive material remains to form a non-air gap region 4 and the insulation film 2 is removed from the other region of the insulation film 2 to form an air gap region 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
