| 摘要 |
One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1XM2(1-X)ZnYOZ (0<X<1, 0<Y<1, and Z<1), where M1 is an element belonging to Group 13 and preferably Ga, and M2 is an element belonging to Group 4 or 14. Typically, the content of M2 is arranged to be greater than or equal to 1 atomic % and less than 50 atomic % of that of M1. Generation of oxygen vacancies can be suppressed in an oxide semiconductor material having the above composition. It is also possible to further improve reliability of a transistor with the oxide semiconductor material with the above composition by compensating oxygen vacancies with excessive oxygen.
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