| 发明名称 |
FINFET WITH IMPROVED GATE PLANARITY |
| 摘要 |
A FinFET with improved gate planarity and method of fabrication is disclosed. The gate is disposed on a pattern of fins prior to removing any unwanted fins. Lithographic techniques or etching techniques or a combination of both may be used to remove the unwanted fins. All or some of the remaining fins may be merged.
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| 申请公布号 |
US2013134513(A1) |
申请公布日期 |
2013.05.30 |
| 申请号 |
US201113307931 |
申请日期 |
2011.11.30 |
| 申请人 |
STANDAERT THEODORUS EDUARDUS;CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;SEO SOON-CHEON;YAMASHITA TENKO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
STANDAERT THEODORUS EDUARDUS;CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;SEO SOON-CHEON;YAMASHITA TENKO |
| 分类号 |
H01L27/12;H01L21/336 |
主分类号 |
H01L27/12 |
| 代理机构 |
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