发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE WITH IMPROVED BREAKDOWN VOLTAGE PERFORMANCE |
摘要 |
A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.
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申请公布号 |
US2013134435(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213650610 |
申请日期 |
2012.10.12 |
申请人 |
COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU CHEN-JU;HSIUNG CHIH-WEN;YAO FU-WEI;HSU CHUN-WEI;WONG KING-YUEN;YU JIUN-LEI JERRY;YANG FU-CHIH |
分类号 |
H01L29/778;H01L21/338;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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