发明名称 |
SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL AND RELATED METHOD OF PRODUCTION |
摘要 |
The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for three dimensional integration is offered by this scheme. |
申请公布号 |
WO2013075947(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
WO2012EP72060 |
申请日期 |
2012.11.07 |
申请人 |
AMS AG |
发明人 |
CASSIDY, CATHAL;SCHREMS, MARTIN;SCHRANK, FRANZ |
分类号 |
H01L23/48;H01L21/768;H01L25/065 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|