发明名称 |
ATOMIC LAYER DEPOSITION OF ZIRCONIUM OXIDE FOR FORMING RESISTIVE-SWITCHING MATERIALS |
摘要 |
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories. |
申请公布号 |
US2013134376(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201113306096 |
申请日期 |
2011.11.29 |
申请人 |
TONG JINHONG;GOPAL VIDYUT;HASHIM IMRAN;HIGUCHI RANDALL;LEE ALBERT;INTERMOLECULAR, INC. |
发明人 |
TONG JINHONG;GOPAL VIDYUT;HASHIM IMRAN;HIGUCHI RANDALL;LEE ALBERT |
分类号 |
H01L45/00;H01L21/02 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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