| 摘要 |
A solid-state imaging device includes an imaging region having pixel units two-dimensionally arranged, each of the pixel units including a photoelectric converting device formed on a semiconductor substrate. The solid-state imaging device includes: an interlayer film made of a dielectric and formed above the photoelectric converting device; a light attenuation filter which is formed above the interlayer film for each of the pixel units or for each of pixel blocks, and changes a transmittance of light when a voltage is applied to the light attenuation filter, the pixel blocks each including a plurality of the pixel units; and a selecting transistor which is formed in the semiconductor substrate for each of the light attenuation filters, and connects or disconnects a path for applying the voltage to the light attenuation filter. |
