| 摘要 |
<p>On the surface of a mounting substrate (101), a semiconductor light-emitting chip (100) comprising a nitride semiconductor active layer (106) having a non-polar surface as a growth surface has as a high-polarization-property region a chip-side region in a crystal axis direction parallel to an active layer of a region illuminated by light from the nitride semiconductor active layer and perpendicular to a polarization direction for light from the active layer, and has as a low-polarization-property region a region other than the high-polarization-property-region in the region illuminated by the light from the active layer, whereupon a metal is arranged in at least a partial region of the high-polarization-property region, at least a part of the low-polarization-property region having a lower proportion of specular reflection than the metal, and the proportion of specular reflection of the high-polarization-property region being higher than the proportion of specular reflection of the low-polarization-property region.</p> |
