MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which an electrode and a semiconductor substrate are excellently connected by ohmic junction.

SOLUTION: The manufacturing method of a semiconductor device comprises: an ion implantation process in which monoatomic metal ions are injected into an electrode formation surface of a semiconductor substrate; an annealing process in which the semiconductor substrate injected with the metal ions is annealed to form a silicide layer on the semiconductor substrate; and an electrode formation process in which an electrode is formed on the electrode formation surface of the semiconductor substrate after the annealing process.

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