| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an optical semiconductor device manufacturing method which can improve reliability. <P>SOLUTION: An optical semiconductor device manufacturing method comprises: forming optical semiconductor elements 14, 15 isolated from each other by an isolation groove 13 on an n-InP substrate 1; forming electrodes 21, 22 each including Pt on top faces of the optical semiconductor elements 14, 15, respectively; forming an electrode 24 electrically connected to the electrodes 21, 22; forming Au plating layers 26, 27 on the electrodes 21, 22, respectively, by an electrolytic plating method using the electrode 24 as a power supply layer; forming a resist 23 covering the Au plating layers 26, 27 by photolithography; and electrically isolating the electrode 21 and the electrode 22 by etching the electrode 24 using the resist 23 as a mask. When the electrode 24 is formed, the electrode 24 is prevented from being formed in the isolation groove 13. <P>COPYRIGHT: (C)2013,JPO&INPIT |
