| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form wiring at a level difference of an inverted mesa while curbing problems such as disconnection. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming an inverted mesa level difference part on a semiconductor substrate by etching; providing an electrode on the semiconductor substrate at a lower stage of the inverted mesa level difference part; providing an insulation film thicker than a height of the inverted mesa level difference part so as to fill the inverted mesa level difference part; performing etchback on the insulation film laminated in the insulation film lamination step so as to leave the insulation film in the inverted mesa level difference part; providing wiring to be connected to the electrode above the insulation film left in the inverted mesa level difference part; forming, at this time, an opening in an interlayer insulation film targeting a part to contact the electrode; and evaporating, after forming the opening, wiring in a region on the interlayer above the inverted mesa level difference part. The wiring is connected with the electrode through a contact opening. <P>COPYRIGHT: (C)2013,JPO&INPIT |
