| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a single crystal, which grows a high-quality SiC single crystal at a high speed. <P>SOLUTION: The method for producing the SiC single crystal includes steps of: (a) preparing SiC powder 2a and C powder 3 or partially carbonized SiC powder as raw material powder; and (b) rapidly growing the SiC single crystal while suppressing a silicon droplet by a sublimation method using the raw material powder after the step (a). It is preferable that the ratio of carbon to silicon in the raw material powder is 1.04-1.14 in the step (a) and a temperature difference between the neighborhood of a crystal growth surface and the neighborhood of the raw material powder is 200°C or more in the step (b). <P>COPYRIGHT: (C)2013,JPO&INPIT |
