发明名称 METHOD OF GENERATING HIGH PURITY BISMUTH OXIDE
摘要 A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
申请公布号 US2013136919(A1) 申请公布日期 2013.05.30
申请号 US201113307301 申请日期 2011.11.30
申请人 DING GUOWEN;HASSAN MOHD FADZLI ANWAR;LE HIEN MINH HUU;SUN ZHI-WEN;INTERMOLECULAR, INC. 发明人 DING GUOWEN;HASSAN MOHD FADZLI ANWAR;LE HIEN MINH HUU;SUN ZHI-WEN
分类号 B32B3/00;B05D1/36;B05D3/02;B32B13/04;B32B15/04;B32B17/06;C23C14/34 主分类号 B32B3/00
代理机构 代理人
主权项
地址