发明名称 |
METHOD OF GENERATING HIGH PURITY BISMUTH OXIDE |
摘要 |
A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier. |
申请公布号 |
US2013136919(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201113307301 |
申请日期 |
2011.11.30 |
申请人 |
DING GUOWEN;HASSAN MOHD FADZLI ANWAR;LE HIEN MINH HUU;SUN ZHI-WEN;INTERMOLECULAR, INC. |
发明人 |
DING GUOWEN;HASSAN MOHD FADZLI ANWAR;LE HIEN MINH HUU;SUN ZHI-WEN |
分类号 |
B32B3/00;B05D1/36;B05D3/02;B32B13/04;B32B15/04;B32B17/06;C23C14/34 |
主分类号 |
B32B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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