NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which can reduce contact resistance and a reverse leakage current.

SOLUTION: A nitride semiconductor device comprises: at least one joint body of a nitride semiconductor layer 103 and a nitride semiconductor layer 104 having bandgap larger than that of the nitride semiconductor layer 103, which is laminated on a substrate 101; tapered parts 108 and 109 which are formed on both ends of the joint body at parts in a range from a top face of the nitride semiconductor layer 104 to the under side of a boundary of the nitride semiconductor layer 103 with the nitride semiconductor layer 104; an anode electrode 106 formed on a lateral face of the tapered part 108 so as to form Schottky contact with the nitride semiconductor layer 103; and a cathode electrode 107 formed on a lateral face of the tapered part 109 so as to form ohmic contact with the nitride semiconductor layer 103. An angle between each of the lateral faces of the tapered parts 108 and 109 and a principal surface of the substrate 101 is not less than 20 degrees and not more than 75 degrees.

COPYRIGHT: (C)2013,JPO&INPIT