发明名称 NITRIDE SEMICONDUCTOR SUBSTRATE
摘要 A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [-1100] direction from a (000-1) plane. The indicator portion indicates a (-1017) plane, a (10-1-7) plane, or a plane inclined by at least -4° and at most 4° in the [1-100] direction from these planes and inclined by at least -0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.
申请公布号 US2013134434(A1) 申请公布日期 2013.05.30
申请号 US201113307396 申请日期 2011.11.30
申请人 MIKAMI HIDENORI;MATSUMOTO NAOKI;OSADA HIDEKI;YOSHIZUMI YUSUKE;YAMAGUCHI SAYURI;SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 MIKAMI HIDENORI;MATSUMOTO NAOKI;OSADA HIDEKI;YOSHIZUMI YUSUKE;YAMAGUCHI SAYURI
分类号 H01L29/15 主分类号 H01L29/15
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