SEMICONDUCTOR DETECTOR HAVING OFFSET BONDING CONTACT

摘要

The invention relates to a semiconductor detector (100) which is configured for the detection of electromagnetic radiation or particle radiation and comprises a semiconductor body (10) of a first conductivity type having a front face (11) and a rear face (12), wherein at least one charge collection contact (18) of the first conductivity type is disposed on the front face (11) and a rear electrode device (13) of a second conductivity type is disposed on the rear face (12). The rear electrode device (13) is designed to be impinged upon with a blocking voltage relative to the semiconductor body (10), and a signal charge collection zone (21) is formed in the semiconductor body (10). Signal charges generated in the signal charge collection zone (21) can be picked up at the at least one charge collection contact (18). An electrode section (14) of the rear electrode device (13) projects at least partially over the signal charge collection zone (21), and a bonding contact (15) which is designed for connecting a bonding conductor (22) is provided in the electrode section (14). The arrangement of the bonding contact (15) outside the signal charge collection zone (21) creates a potential configuration that prevents detector leakage currents caused by grid defects in the area of the bonding contact (15).