METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide layer (19) provided with a main surface is formed on a substrate (1). A mask (17) that covers part of the main surface of the silicon carbide layer (19) is formed. Thermal etching is performed on the main surface of the silicon carbide layer (19), upon which the mask is formed (17), using a chlorine gas, in such a manner as to provide side surfaces (SS), which are inclined relative to the main surface, to the silicon carbide layer (19). A step in which thermal etching is performed is carried out in an atmosphere in which the partial pressure of the chlorine gas is not more than 50%.