METHOD FOR MANUFACTURING OF POLY SILICON LAYER, MEHTOD FOR MANUFACTURING OF THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for manufacturing a polycrystalline silicon layer and a method for manufacturing a thin film transistor using the same are provided to easily form polycrystalline silicon by reducing the crystallization energy of an amorphous silicon layer through a capping layer with a larger thermal expansion coefficient than the amorphous silicon layer. CONSTITUTION: A buffer layer(110) is formed on a substrate(100). An amorphous silicon layer is formed on the buffer layer. A capping layer(130) is formed on the amorphous silicon layer. The thermal expansion coefficient of the capping layer is larger than the thermal expansion coefficient of the amorphous silicon layer. The amorphous silicon layer is crystallized into a polycrystalline silicon layer(125) by thermally processing the substrate. The capping layer is removed from the polycrystalline silicon layer. [Reference numerals] (AA) Removal