| 摘要 |
A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the device region is provided, an align trench is formed in the outer region, a dummy trench is formed in the device region, an epi layer is formed over a top surface of the semiconductor substrate and within the dummy trench, a current path changing part is formed over the epi layer, and a gate electrode is formed over the current path changing part. When the epi layer is formed, a current path changing trench corresponding to the dummy trench is formed over the epi layer, and the current path changing part is formed within the current path changing trench.
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