发明名称 |
NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYER |
摘要 |
A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element. |
申请公布号 |
US2013134373(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201113305568 |
申请日期 |
2011.11.28 |
申请人 |
WANG YUN;HASHIM IMRAN;CHIANG TONY;INTERMOLECULAR, INC. |
发明人 |
WANG YUN;HASHIM IMRAN;CHIANG TONY |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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