SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

A method for manufacturing a semiconductor structure. The method includes the following steps: providing an SOI substrate, forming a gate stack on the SOI substrate, forming a flank on a side wall of the gate stack and forming a source/drain area on either side of the gate stack; forming a first metal layer on the surface of the entire semiconductor structure, and then removing the first metal layer; forming an amorphous semiconductor layer on the surface of the source/drain area; forming a second metal layer on the surface of the entire semiconductor structure, and then removing the second metal layer; and performing an annealing operation on the semiconductor structure. Correspondingly, also provided is a semiconductor structure. The present invention effectively reduces the contact resistance of the source/drain area.