| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a power semiconductor device capable of improving an isolation voltage and reliability under a high-temperature environment. <P>SOLUTION: By combining an oxygen plasma surface treatment step (step 5) and a preliminary heating process (step 6) before silicone gel injection, adhesiveness between a silicone gel 9 (a protective material), and an insulating substrate 1 having a conductive pattern and a semiconductor chip 2 is improved, thus an isolation voltage and reliability of a power semiconductor device under a high-temperature environment can be improved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
