| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high quality silicon epitaxial wafer while inhibiting cloudiness on a rear surface and pin halo during epitaxial growth. <P>SOLUTION: In a manufacturing method of a silicon epitaxial wafer, a silicon single crystal substrate is placed on a wafer placement surface of a susceptor disposed in a chamber and a thin film is epitaxially grown on the silicon single crystal substrate to manufacture the silicon epitaxial wafer. In the manufacturing method, before the silicon single crystal substrate is placed, the wafer placement surface of the susceptor is coated with a polysilicon film for a time period exceeding 50 seconds and up to 300 seconds while a silicon material gas is flowed in the chamber. Subsequently, the silicon single crystal substrate is placed on the wafer placement surface of the susceptor and the thin film is epitaxially grown. <P>COPYRIGHT: (C)2013,JPO&INPIT |
