发明名称 Method of Manufacturing Sealed Body and Method of Manufacturing Light-Emitting Device
摘要 Methods of manufacturing a sealed body and a light-emitting device with high airtightness in which generation of a crack in a substrate and a frit glass in an overlap region where laser light irradiation is started and ended is prevented are provided. A high-reflectivity region having high reflectivity with respect to laser light and a low-reflectivity region having lower reflectivity than the high-reflectivity region are provided in a region which overlaps with the frit glass and is over a substrate facing a substrate on which the frit glass is formed. When scanning with laser light is started from the low-reflectivity region, a crack is less likely to be generated in the frit glass.
申请公布号 US2013137200(A1) 申请公布日期 2013.05.30
申请号 US201213687354 申请日期 2012.11.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SHIMOMURA AKIHISA
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
主权项
地址