发明名称 |
Method of Manufacturing Sealed Body and Method of Manufacturing Light-Emitting Device |
摘要 |
Methods of manufacturing a sealed body and a light-emitting device with high airtightness in which generation of a crack in a substrate and a frit glass in an overlap region where laser light irradiation is started and ended is prevented are provided. A high-reflectivity region having high reflectivity with respect to laser light and a low-reflectivity region having lower reflectivity than the high-reflectivity region are provided in a region which overlaps with the frit glass and is over a substrate facing a substrate on which the frit glass is formed. When scanning with laser light is started from the low-reflectivity region, a crack is less likely to be generated in the frit glass.
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申请公布号 |
US2013137200(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213687354 |
申请日期 |
2012.11.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SHIMOMURA AKIHISA |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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